Research of CBN Film and its Application Prospect on Cutting Tool

Abstract:

Tool material has been one of the focuses in tool research. Diamond and cubic boron nitride (c-BN) are materials of exceptional and very similar properties that make them extremely valuable not only for the aesthetics of diamond. C-BN is a material synthesized rather recently that has rapidly spurred technological and scientific interest. Presently, both materials have found commercial applications. There is still a long way for the practical application of cBN film. The main problems are such as adhesion, thickness, purity, nucleating, and growth mechanism. We will develop a new way of DC plasma jet CVD way to synthesis the cBN film. The deposition of cBN films can be performed in a DC jet plasma CVD reactor by using an Ar-N2-BF3-H2 gas mixture, on the basis of deposition of diamond has been achieved.

• Periodical: Key Engineering Materials (Volume 499)
• Pages: 144-149
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.499.144
• Online since: January 2012
• Authors: Zhen Hua Qing, Dun Wen Zuo, X.H. Zhang, F. Xu, L. Zheng
• Keywords: CBN Film, Cutting Tool, DC Plasma Jet CVD, Diamond Film

References

[19] On the basis of two-step preparation, They adjust the test parameters, form three for high quality system.

[20] cBN film. Matsumoto introduced DC-bias-assisted DC jet chemical vapor deposition in an Ar-N2-BF3-H2 system.

[21] synthesized Cubic boron nitride films. By this method, the deposition of cBN at high gas pressure of 50 torr became possible, and the conditions of cBN CVD approached to those of diamond CVD. cBN films with low residual stress(1-2GPa) and with large crystal size of up to several hundred nanometers were obtained and clear Raman peaks of cBN appeared. Furthermore, the deposition rate was as high as 0. 3μm/min at the initial stage and over 20-μm-thick BN films were obtained for a 3-h deposition. These remarkable improvements are attributed to the preferential etching effect of fluorine to sp2 bonds and the decrease of the bombarding energy of ions.

DOI: 10.1016/s0925-9635(01)00461-7

[21] Deposition of nano-cBN films is possible with ion-assisted CVD and ion-assisted PVD techniques. Since the c-BN crystal size in such layers is in the range of nanometers, such layers should be called nano-cBN. The amount of grain boundaries in such materials is rather high and this fact should not be negated by using the notation pure c-BN,. Technological bottlenecks of cBN films prepared by DC plasma jet method Despite at present high content of cubic phase boron nitride films have been able syntheses in a variety of ways, but there is still need to do a lot of research work as preparation mentioned above. There is still a long way for the practical application of cBN film. The main problems are such as adhesion, thickness, purity, nucleating, and growth mechanism. We will develop a new way of DC plasma jet CVD way to synthesis the cBN film. Fig. 2 DC plasma jet CVD diamond deposition apparatus Fig. 3 DC plasma jet CVD cBN deposition apparatus Our team has prepared thick diamond film with DC plasma jet CVD apparatus (figure 2) for many years.

[22] The nontransferable plasma torch has a cylindrical anode and a cathode rod and the anode nozzle's diameter is between 1 and 3 mm. The copper substrate holder is welded to a coaxial stainless steel tube contains cooling water. The plasma torch and the substrate holder are both put in the process vacuum chamber. The distance between and the substrate is changed by adjusting the steel tube. The arc discharge is generated by a constant DC current power supply formed the plasma jet is by forcing the source gas through and across the narrow gap between the two electrodes. High density carbon and hydrogen ion plasmas are obtained in this process. The diamond film is synthesized in the form of a plasma jet onto a water cooled substrate by spraying high-velocity plasma. One of the preparation conditions are shown in able 2. prepration process of large size spherical diamond thick film is widely investigated and the results showed that it has an important influence on the quality of diamond film. Substrate temperature, CH4 concentration, chamber pressure, substrate curvature and distance between the substrate and plasma are closely related with diamond film quality. The deposition of cBN films can be performed in a DC jet plasma CVD reactor by using an Ar-N2-BF3-H2 gas mixture and in the process argon used as reactant gas. The experimental setup shown in figure3 is made of water-cooled double-wall quartz tube and a metal nozzle through which the plasma and reactant gases were separately injected. This torch was set on a metal chamber that was evacuated by an oil-rotary pump and a mechanical roots pump. The substrate was is silicon wafer put on a water-cooled Mo/Cu substrate holder. The holder can be DC biased. The substrate's temperature is measured by infra-red temperature tester.

[22] The experimental conditions fore the deposition of the cBN film are listed in table 3. Table 2 Diamond film depositionconditions.

[21] Chamber pressure/kpa 5 Substrate temperture 890-950℃ Ar(slm) 3 H2(slm) 4 CH4(sccm) 0. 05 Duration 72h Table 3 cBN film deposition conditions.

[22] Chamber pressure/kpa 6. 7 Substrate temperture 1040℃ Ar(slm) 20 N2(slm)(10% in Ar) 1. 5 H2(sccm) 30 BF3(sccm) 5 Duration 10 in thickness 3μm CBN coating deposition process will develop with three steps of the nucleation, growth and annealing. In DCPJ-CVD system for low stress cBN coatings prepared in situ form, in the atmosphere exert BF3/N2/H2/Ar negative bias for cBN growth on substrate, and then the nucleation of cBN film used substrate negative bias continue to cBN growth. When the negative bias, in N2 atmosphere cBN film high temperature annealing to reduce the film internal stress, annealing without applied bias, cBN growth and annealing alternately, in a timely manner in order to enhance the release of growth stress cBN The thickness of thin film deposition. CBN caused by combination of annealing the interface, composition, morphology and defects found in system testing and analysis and to establish the growth mechanism of stress relaxation and annealing alternately stress release model, in order to guide and optimize the cBN alternating cycles of growth and annealing And frequency. Through the large number of experiments to find the optimal deposition parameters, tool coatings, low-level stress cBN growth. Acknowledgements This work is supported by National Natural Science Foundation of China (Grant No. 51005117); 2010 open funding of NUAA graduate student innovation base (lab) Reference.

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