The Chemical Plating Copper of the SiC Particles and Thermal Expansion Behavior of the SiCp/Cu Composites

Abstract:

In this paper, the chemical copper plating technology was utilized to modify the SiC particles and the SiCp/Cu composites were fabricated by the pressure-less sintering technology. The effect of pretreatment solution on the coating quality of the SiC particles was discussed in details. The pure copper and copper- coated SiC particles or SiC particles without coated copper were used to fabricate the SiCp/Cu composites. At the same time, the microstructures and thermal expansion coefficients of the SiCp/Cu composites were studied. The results showed that the uniform and continuous Cu coating on the SiC particles can be obtained after chemical copper plating, and the copper-coated SiC particles can distributed continuously in the matrix of the SiCp/Cu composites. The chemical copper plating technology could improve the wettability between SiC particles and copper matrix obviously. The addition of the SiC particle could reduce the CTE of the SiCp/Cu composites.

• Periodical: Key Engineering Materials (Volume 544)
• Pages: 334-338
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.544.334
• Online since: March 2013
• Authors: Ming Hu, Yun Long Zhang, You Jin Liu, Jing Gao
• Keywords: Chemical Copper Plating, Coefficient of Thermal Expansion (CTE), Electronic Packaging Materials, Pretreatment, SiC Particles

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