Resistance Switching Characteristics in Zirconium Oxide

Chun Hung Lai; Hao Hsiang Hsu; Yi Mu Lee; Hsi Wen Yang

doi:10.4028/www.scientific.net/KEM.573.151

Paper Titles

The Microstructure Evolution and Control of Alloy 690 during Cold Rolling
p.95

The Numerical Simulation for High Temperature Creep of the Porous Cu Alloy
p.105

Applied QFD with Wooden Material in Campus Furniture DFA Procedure
p.113

The Study of Composition and Morphology of Pd-Ag Alloy Powders by Pulse Electrodeposition
p.121

A Comparative Study of N-Type ZnO and P-Type NiO Nanostructures for the Detection of Aqueous Ethanol Solution
p.127

Simulation of Glass Molding Process for Planar Type SOFC Sealing Devices
p.131

Investigations of Lead-Free Glasses for Post-Fired and Embedded Thick Film Resistors
p.137

Critical Factors for the Construction Company to Select the Green Building Materials
p.143

Resistance Switching Characteristics in Zirconium Oxide
p.151

HomeKey Engineering MaterialsKey Engineering Materials Vol. 573Resistance Switching Characteristics in Zirconium...

Resistance Switching Characteristics in Zirconium Oxide

Abstract:

The resistance switching behavior in sputtered Ti/ZrO₂/Pt sandwiched structure was investigated for nonvolatile memory application. Multiple current-voltage measurements reveal highly uniform distribution of the conduction current and switching voltage. This bipolar resistive switching driven by bias of proper magnitude and polarity is interpreted by filament model. The reset threshold increases with the compliance setting imposed on the turn-on transition, while the switching currents in high and low resistance states are not varied for different top-electrode areas. Both characteristics are ascribed to the electro-chemical reactions of field-induced reduction-oxidation processes.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 573)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.573.151

Citation:

Cite this paper

Online since:

September 2013

Authors:

Chun Hung Lai, Hao Hsiang Hsu, Yi Mu Lee, Hsi Wen Yang

Keywords:

Memory, Resistance Switching, Sputter, Zirconium Oxide

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] L. Dongsoo, C. Hyejung, S. Hyunjun, C. Dooho, H. Hyunsang, L. Myoung-Jae, S. Sun-Ae, I.K. Yoo: IEEE Electron Device Lett. Vol 26 (2005) pp.719-721.

DOI: 10.1109/led.2005.854397

Google Scholar

[2] F. Argall: Solid State Electron., Vol 11 (1968) p.535–541.

Google Scholar

[3] J.F. Gibbons and W.E. Beadle: Solid State Electron., Vol 7 (1964) p.785–797.

Google Scholar

[4] J.R. Contreras, H. Kohlstedt, U. Poppea, R. Waser, C. Buchal and N. A. Pertsev: Appl. Phys. Lett., Vol 83 (2003) p.4595–4597.

DOI: 10.1063/1.1627944

Google Scholar

[5] K. Szot, W. Speier, G. Bihlmayer and R. Waser: Nat. Mater. Vol 5 (2006) pp.312-320.

Google Scholar

[6] Y. Xia, Z. Liu, Y. Wang, L. Shi, L. Chen, J. Yin and X. Meng: Appl. Phys. Lett. Vol 91 (2007) p.102904.

Google Scholar

[7] M.H. Lin, M.C. Wu, C.H. Lin and T.Y. Tseng: IEEE Trans. Electron Devices, Vol 57 (2010) pp.1801-1808.

Google Scholar

[8] X. Chen, N.J. Wu, J. Strozier and A. Ignatiev: Appl. Phys. Lett. Vol 87 (2005) p.233506.

Google Scholar

[9] B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg and S. Tiedke: J. Appl. Phys. Vol 98 (2005) p.033715.

DOI: 10.1063/1.2001146

Google Scholar

[10] C.Y. Liu, X. J Lin, H.Y. Wang and C. H Lai: Jap. J. Appl. Phys. Vol 49 (2010) p.056507.

Google Scholar

[11] C.Y. Lin, C.Y. Wu, C.Y. Wu, T. C. Lee, F. L. Yang, C. Hu and T. Y. Tseng: IEEE Electron Device Lett. Vol 28 (2007) pp.366-368.

Google Scholar