Fabrication of Si Nanowire Biosensor Using FIB and its Evaluations

Anh Hoang Truong; Hayato Sone; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.596.224

Paper Titles

Design Methodology and Jitter Analysis of a Delay Line for High-Accuracy On-Chip Jitter Measurements
p.176

Self-Calibration Techniques of Pipeline ADCs Using Cyclic Configuration
p.181

Design of Analog Filter Using Genetic Algorithm
p.187

Low Voltage and High Oscillation Frequency Gated Ring Oscillator Using Bootstrap Technique
p.195

High-Speed Data Transmissions Using Tomlinson-Harashima Precoding
p.199

Coding Techniques for High-Speed Data Transmission Based on Spectrum Shaping
p.204

Effect of Deglycosylation on the Fibrin Polymerization Depending on NaCl Concentration
p.213

Immobilization of His-Tagged Proteins through Interaction with L-Cysteine Electrodeposited on Modified Gold Surfaces
p.219

Fabrication of Si Nanowire Biosensor Using FIB and its Evaluations
p.224

HomeKey Engineering MaterialsKey Engineering Materials Vol. 596Fabrication of Si Nanowire Biosensor Using FIB and...

Fabrication of Si Nanowire Biosensor Using FIB and its Evaluations

Abstract:

We demonstrated the fabrication of silicon nanowire (SiNW) sensors by focused ion beam (FIB) method and determined the effects of changes of nanowire parameters of width and wire-number on the SiNW electrical property. SiNW sensors were fabricated on a silicon-on-insulator (SOI) wafer with Au-Cr electrodes by the FIB method. We fabricated the SiNW sensor with a minimum width of 90 nm, length of 20 μm and height of 60 nm. The I-V characteristics in the state of ohmic contact were obtained, and the SiNW resistance was found to have 0.86 MΩ and a resistivity of 0.02 Ωcm. In addition, the electrical resistance dependence on width and wire-number was investigated. We found that wire conductance could be increased by increasing the wire-number and wire width.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 596)

Pages:

224-228

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.596.224

Citation:

Cite this paper

Online since:

December 2013

Authors:

Anh Hoang Truong, Hayato Sone, Sumio Hosaka

Keywords:

Biosensor, Focused Ion Beam (FIB), I-V Curve, Sensitivity, Silicon Nanowire Sensor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R. Berger, Ch. Gerber, H.P. Lang and J.K. Gimzewki: Microelectron. Eng. Vol. 35 (1997), p.373.

Google Scholar

[2] H.P. Lang, M.K. Baller, R. Berger, Ch. Gerber, J.K. Gimzeski, F.M. Battiston, P. Fornaro, J.P. Ramseyer, E. Meyer and H.J. Guntherodt: Anal. Chim. Acta Vol. 393 (1999), p.59.

DOI: 10.1016/s0003-2670(99)00283-4

Google Scholar

[3] H. Sone, Y. Fujinuma and S. Hosaka: Jpn. J. Appl. Phys. Vol. 43, (2004), p.3648.

Google Scholar

[4] S. Hosaka, T. Chiyoma, A. Ikeuchi, H. Okamo, H. Sone and T. Izumi: Current Appl. Phys. Vol. 6 (2006), p.384.

Google Scholar

[5] H. Sone, A. Ikeuchi, T. Izumi, H. Okano and S. Hosaka: Jpn. J. Appl. Phys. Vol. 45 (2006), p.2301.

Google Scholar

[6] A.H. Truong, H. Sone, T. Kawakami and S. Hosaka: Key Eng. Mat. Vol. 534 (2013), p.251.

Google Scholar

[7] G.J. Zhang, L. Zhang, M.J. Huang, Z.H.H. Luo, G.K.I. Tay, E.J.A. Lim, T.G. Kang and Y. Chen: Sen. and Act. B Vol. 146 (2010), p.138.

Google Scholar

[8] K.I. Chen, B.R. Li and Y.T. Chen: Nano Today Vol. 6 (2011), p.131.

Google Scholar

[9] Y. Cui, Q. Wei, H. Park and C. Lieber: Science Vol. 293 (2001), p.1289.

Google Scholar