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HomeKey Engineering MaterialsKey Engineering Materials Vol. 605PA-MBE Grown p-n (p-ZnO:(As+Sb)/n-GaN) and p-i-n...

PA-MBE Grown p-n (p-ZnO:(As+Sb)/n-GaN) and p-i-n (p-ZnO:As/HfO₂/n-GaN) Heterojunctions as a Highly Selective UV Detectors

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Abstract:

Zinc oxide is a promising candidate for application in UV photodetectors due to the large direct band gap and the high absorption coefficient in the UV. The high quality p-n and p-i-n structures consist of single or dual acceptor doped ZnO:(As,Sb) films grown by MBE, thin HfO₂layer grown by ALD method and n-type GaN templates. The As and Sb concentrations is 10²⁰ cm^-3.The maximum forward-to-reverse current ratio I_F/I_R in the obtained p-n diodes is of about 10⁵at ±4 V and in the case of p-i-n diodes is of about 10⁶, which are very good results for this type of heterojunctions. The UV photodetectors are highly selective. The maximum of the detection wavelength was found at about 365 nm (FWHM of the photocurrent peak is ~17 nm). In the case of p-i-n detectors, the maximum of detection was found at 376, 360, and 341 nm. Additionally, it is possible to control the detection range by the applied reverse voltage. The dark to light current ratio in both cases is ~10⁴.

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Materials and Applications for Sensors and Transducers III

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Periodical:

Key Engineering Materials (Volume 605)

Pages:

310-313

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.605.310

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Online since:

April 2014

Authors:

Ewa Przezdziecka, K. Gościński, S. Gieraltowska, E. Guziewicz, R. Jakieła, A. Kozanecki

Keywords:

Molecular Beam Epitaxy, p-n Heterojunction, UV Detector, Zinc Oxide

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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