Electroluminescence of a Multilayer in which Thin Films of NaNbO3:Pr Phosphor and SnO2:Sb Transparent Conductor Are Alternately Stacked

Tôru Kyômen; Sayaka Hasuko; Minoru Hanaya; Hiroshi Takashima

doi:10.4028/www.scientific.net/KEM.643.33

Paper Titles

Observation of Magnetic Nanodot Arrays Using Near-Field Polarization Microscope
p.9

Fabrication of Microstructures Embedded in SC-CVD Diamond with a Focused Proton Microbeam
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Study of Allylsilyl and Hydrosilyl Groups as Anchor Moieties of Sensitizing Dyes for Dye-Sensitized Solar Cells
p.21

Enhancement of Optical Transmittance of Polymer-Dispersed Liquid Crystal Cells
p.29

Electroluminescence of a Multilayer in which Thin Films of NaNbO₃:Pr Phosphor and SnO₂:Sb Transparent Conductor Are Alternately Stacked
p.33

Magnetic Compton and Bragg Scattering Studies of Disordered Pd₀_.₈₀Co_0.₂₀ Alloy
p.39

Single-Inductor Dual-Output DC-DC Converter Design with Exclusive Control
p.47

Continuous-Time Delta-Sigma Controller for DC-DC Converter
p.53

A Simple Analog Feed-Forward Controller Design for DC-DC Buck Converter
p.61

HomeKey Engineering MaterialsKey Engineering Materials Vol. 643Electroluminescence of a Multilayer in which Thin...

Electroluminescence of a Multilayer in which Thin Films of NaNbO₃:Pr Phosphor and SnO₂:Sb Transparent Conductor Are Alternately Stacked

Abstract:

Oxide inorganic electroluminescent device in which thin films of Pr-doped NaNbO₃ phosphor and Sb-doped SnO₂ transparent conductor are alternately stacked was prepared by sol-gel and spin-coating methods. Red electroluminescence was observed due to f-f transitions of Pr³⁺ ions by applying 5-kHz ac voltages to the device. The luminance was 1.0 cd m⁻² at 25 V ac and5.0 cd m⁻² at 34 V ac.