Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor

Abstract:

A silicon magnetic sensitivity transistor (SMST) with negative resistance oscillations phenomenon is presented in this paper, which is constituted by emitter (E), base (B) and collector (C). The SMST chip is fabricated on <100> orientation high resistivity C-type silicon cup by using MEMS technology. Experiment results show, when external magnetic field B=0 T, base injection current I_b is the scope of 1.5mA to 1.7mA and V_CE is greater than 4.0V, the collector current I_c appears negative resistance oscillation phenomenon, the oscillation frequency will increase with the increase of the V_CE. I_c changes with external magnetic field B, where V_CE and I_b are constant. With the condition of the I_b=1.5 mA and V_CE=9.0 V, the oscillation frequency of B=0 mT and B=-150 mT are 5.88 kHz and 7.60 kHz, respectively.

• Periodical: Key Engineering Materials (Volumes 645-646)
• Pages: 120-125
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.645-646.120
• Online since: May 2015
• Authors: Xiao Feng Zhao, Yi Fan Li, Mei Wei Lv, Dian Zhong Wen*, Hong Quan Zhang
• Keywords: Frequency Characteristics, MEMS Technology, Negative Resistance Oscillations, Silicon Magnetic Sensitivity Transistor

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