Development of the Local Polishing Technique for Single-Crystal SiC Wafer

Shin Nagae; Akihisa Kubota; Mutsumi Touge

doi:10.4028/www.scientific.net/KEM.656-657.204

Paper Titles

Basic Study on Thermo Chemical Turning Method for Metal Bonded Diamond Wheels
p.180

Characterization of Machining Damages Generated by a Piercing Process in CFRP Laminates
p.185

Damage of PVD-Coated Cutting Tools Due to Interrupted Cutting of Ni-Based Superalloys
p.191

A Novel Cutting Concept of CFRP Composites for Extending the Life of Tool
p.198

Development of the Local Polishing Technique for Single-Crystal SiC Wafer
p.204

Effect of Cutting Conditions on Tool Wear in Driven Rotary Cutting of Maraging Steel
p.208

Effect of Cutting Force Control on Cutting Characteristics of CFRP in Diamond Saw Cutting
p.214

Effect of Dry Ice Blasting on Removal of Loading Carbon Chips on Wheel Surface
p.220

Effect of High-Pressure Coolant Supply on Chip-Breaking and Tool Wear in Machining of Stainless Steel
p.226

HomeKey Engineering MaterialsKey Engineering Materials Vols. 656-657Development of the Local Polishing Technique for...

Development of the Local Polishing Technique for Single-Crystal SiC Wafer

Abstract:

We have developed a novel polishing technique by scanning a small magnetic tool in hydrogen peroxide solution for smoothing a 2-inch SiC wafer. Obtained results show that the surface roughness in almost areas on the 2-inch SiC wafer is improved markedly. Our proposed method effects a dramatic improvement in a surface microroughness from 0.699 nm Rms to 0.079 nm Rms.

You might also be interested in these eBooks

Recent Development in Machining, Materials and Mechanical Technologies

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 656-657)

Pages:

204-207

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.656-657.204

Citation:

Cite this paper

Online since:

July 2015

Authors:

Shin Nagae, Akihisa Kubota*, Mutsumi Touge

Keywords:

Hydroxyl Radicals (OH Radicals), Local Polishing, SiC Substrate

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] M. Kikuchi, Y. Takahashi, T. Suga, S. Suzuki and Y. Bando, Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium(III) Oxide Abrasive, J. Am. Ceram. Soc., 75 (1992), 189-194.

DOI: 10.1111/j.1151-2916.1992.tb05463.x

Google Scholar

[2] L. Zhou1, V. Audurier1, P. Pirouz1 and J. A. Powell, Chemomechanical Polishing of Silicon Carbide, J. Electrochem. Soc. 144 (1997), L161-L163.

DOI: 10.1149/1.1837711

Google Scholar

[3] C. L. Neslen, W. C. Mitchel, R. L. Hengehold, Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC, J. Electron. Matter. 30 (2001) 1271-1275.

DOI: 10.1007/s11664-001-0111-2

Google Scholar

[4] A. Kubota, M, Yoshimura, T, Watayo, Y, Nakanishi and M. Touge, Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-SiC Utilizing Fe Abrasive Particles, Key Engineering Materials Vols. 447-448 (2010), 146-149.

DOI: 10.4028/www.scientific.net/kem.447-448.146

Google Scholar

[5] A. Kubota, Y. Ichimori and M. Touge, Surface polishing of 2-inch 4H-SiC wafer using Fe abrasive particles, Key Engineering Materials 516 (2012), 487-491.

DOI: 10.4028/www.scientific.net/kem.516.487

Google Scholar

[6] A. Kubota, M. Yoshimura, S. Fukuyama, C. Iwamoto and M. Touge, Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution, Precision Engineering 36 (2012), 137-140.

DOI: 10.1016/j.precisioneng.2011.09.003

Google Scholar