Numerical Analysis for the Growth of Epitaxy Layer in a Large-Size MOCVD Reactor

Chih Kai Hu; Hung I Chien; Tomi T. Li

doi:10.4028/www.scientific.net/KEM.656-657.515

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 656-657Numerical Analysis for the Growth of Epitaxy Layer...

Numerical Analysis for the Growth of Epitaxy Layer in a Large-Size MOCVD Reactor

Abstract:

A modified large-size MOCVD reactor is developed to produce uniform and large-volume epitaxy thin film layer of gallium nitride (GaN). The full governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal flow field, and the operating parameters affect molar concentration of each reactant, and the thin film uniformity. These parameters are involved such as the chamber pressure (100-700 torr), susceptor rotation rate (100-800). In this paper, the simulation results from these listed parameters shows that an optimum epitaxy layer can be achieved in the large-size reactor.

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Periodical:

Key Engineering Materials (Volumes 656-657)

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515-519

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.656-657.515

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Online since:

July 2015

Authors:

Chih Kai Hu*, Hung I Chien, Tomi T. Li

Keywords:

Epitaxy, Heat Transfer, Mass Transfer, MOCVD Process, Operating Parameter, Reactor Geometry, Rotating Disk, Thermal Flow Field

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