Spectroscopic Ellipsometry Analyses on Plasma Treatment of Aluminium Oxide Thin Film

Abstract:

Spectroscopic Ellipsometry (SE) was used to analyse the effect of plasma treatment on aluminium oxide thin films. The aluminium oxide thin films were fabricated by reactive DC magnetron sputtering at different operating pressures. The as-deposited thin films were plasma treated at different ambient Ar and O₂ conditions. The prepared samples were investigated for physical microstructures with scanning electron microscopy (SEM) and optical characteristics with ellipsometry. The ellipsometric spectra of the prepared samples were measured in the range of 250 to 1650 nm with the incidence angle of 70 degree. Based on the optical model with the Tauc-Lorentz function, the thickness and the refractive index of the films were determined and discussed. The results showed that the thickness and the refractive index of the aluminium oxide thin films were greatly affected after the plasma treatments. In comparison, the results of those prepared at different operating pressures were also discussed. The SE results were confirmed with those from SEM.

• Periodical: Key Engineering Materials (Volumes 675-676)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.675-676.197
• Online since: January 2016
• Authors: Tossaporn Lertvanithphol*, W. Rakreungdet, Pitak Eiamchai, M. Horprathum, C. Hom-On, P. Jaroenapibal, S. Limwichean, N. Nuntawong, V. Patthanasettakul, P. Chindaudom
• Keywords: Aluminium Oxide Thin Film, Plasma Treatment, Spectroscopic Ellipsometry

References

[1] X. Tang, F. Luo, F. Ou, W. Zhou, D. Zhu, Z. Huang, Effect of negative substrate bias voltage on the structure and properties of aluminium oxide films prepared by DC reactive magnetron sputtering, Applied Surface Science 259 (2012) 448-453.

DOI: 10.1016/j.apsusc.2012.07.064

[2] X. Zhang, J. Zhu, L. Zhang, K. Kishimoto, S. Du, X. Yin, Crystallization of alumina films deposited by reactive magnetron sputtering with resputtering technique at low temperature, Surface & Coating Technology 228 (2013) S393-S396.

DOI: 10.1016/j.surfcoat.2012.05.074

[3] C. Cibert, H. Hidalgo, C. Champeaux, P. Tristant, C. Tixier, J. Desmaison, A. Catherinot, Properties of aluminium oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition, Thin Solid Films 516 (2008).

DOI: 10.1016/j.tsf.2007.05.064

[4] A. BagheriKhatibani, S.M. Rozati, Synthesis and characterization of amorphous aluminium oxide thin films prepared by spray pyrolysis: Effect of substrate temperature, Journal of Non-Crystalline Solids 363 (2013) 121-133.

DOI: 10.1016/j.jnoncrysol.2012.12.013

[5] H. Yang, W. Luan, S. Tu, Corrosion behavior and thermal conductivity of plasma sprayed AlN/Al2O3 coating, Materials Transactions 47 (2006) 1649-1653.

DOI: 10.2320/matertrans.47.1649

[6] R. Katamreddy, R. Inman, G. Jursich, A. Soulet, A. Nicholls, C. Takoudis, Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si (100), Thin Solid Films 515 (2007).

DOI: 10.1016/j.tsf.2007.02.001

[7] H. Ohsaki, Y. Shibayama, N. Yoshida, T. Watanabe, S. Kanemaru, Room-temperature crystallization of amorphous films by RF plasma treatment, Thin Solid Films 517 (2009) 3092-3095.

DOI: 10.1016/j.tsf.2008.11.086

[8] H. Fujiwara, Spectroscopic ellipsometry: principles and applications, John Wiley & Sons Ltd., West Sussex, (2007).

[9] G. Balakrishnan, P. Kuppusami, S. Tripura Sundari, R. Thirumurugesan, V. Ganesan, E. Mohandas, D. Sastikumar, Structural and optical properties of γ-alumina thin films prepared by pulsed laser deposition, Thin Solid Films 518 (2010) 3898-3902.

DOI: 10.1016/j.tsf.2009.12.001