Development of a Combined Diamond Impregnated Lapping Plate

Abstract:

This paper presents a combined diamond-impregnated lapping plate for single crystal silicon carbide (SiC) to improve the material removal rate due to SiC having very low material removal rate. Three different dimaond shapes were prepared: (1) "sharp," a sharp-edged diamod; (2) "blocky," a high quality crystalline diamond; (3) "oxidized diamond". The diamonds were manufactured by using high temperature heating method in a furnace to induce diamond oxidation resulting in improvement of Ra and sharpness of the diamonds. Three combined diamond-impregnated lapping plates were fabricated using the above mentioned diamond shapes with diamond size of 6μm. The surface roughness and removal rate of the SiC lapping with these plate were investigated. Experimental results showed that the average material removal rate (MRR) of oxidized diamond is higher than that of the other diamond shapes. The MRR of oxidized diamond for C-face and Si-face SiC are 4.72μm/hr and 6.26μm/hr, respectively. It is found that the surface roughness (Ra) of oxidized diamond for C-face and Si-face are 7.547nm and 8.06nm, respectively. This indicates that the combined diamond-impregnated lapping plate can be effectively used for SiC machining.

• Periodical: Key Engineering Materials (Volume 739)
• Pages: 157-163
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.739.157
• Online since: June 2017
• Authors: Guan Fu Lin*, Ming Yi Tsai, Chiu Yuan Chen
• Keywords: Diamond Anchor, Diamond-Impregnated Plate, Polishing, Single-Crystal Silicon Carbide

References

[1] F. Huo, D. Guo, R. Kang, G. Feng. Nanogrinding of SiC wafers with high flatness and low subsurface. Trans Nonferrous Met Soc China Vol. 22 (2012), p.302−p.303.

DOI: 10.1016/s1003-6326(11)61566-5

[2] B. Guo, B. Chen, Q. Zhao. On-machine precision form truing of arc-shaped diamond wheels. Journal of Materials Processing Technology Vol. 223 (2015), p.65–p.74.

DOI: 10.1016/j.jmatprotec.2015.03.046

[3] J.Y. Shen, J.Q. Wang, B. Jiang, X.P. Xu. Study on wear of diamond wheel in ultrasonic vibration-assisted grinding ceramic. Wear Vol. 332-333 (2015) p.788–p.793.

DOI: 10.1016/j.wear.2015.02.047

[4] J.G. Park , H.M. Kim , G.H. Park , Y.G. Seo , D.J. Moon, B.J. Cho. Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size. Wear Vol. 332-333 (2015), p.794 –p.799.

DOI: 10.1016/j.wear.2015.02.029

[5] T.G. Bifano, T.A. Dow, R.O. Scattergood. Ductile-Regime grinding. A new technology for machining brittle materials. Journal of engineering for industry, Vol. 113 (1991) 184-189.

DOI: 10.1115/1.2899676

[6] K. Masumoto. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle. Materials 7(2014) 7010-7021.

DOI: 10.3390/ma7107010