Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions

Serge Zhuiykov; Zhen Yin Hai

doi:10.4028/www.scientific.net/KEM.765.8

Paper Titles

Preface

Preparation and Characterization of Magnetic Force Microscopy Tips Coated with Nickel Films by e-Beam Evaporation
p.3

Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions
p.8

The Electromechanical Behavior of Dielectric Elastomer Actuator Stiffened by Fiber
p.12

Molecular Vibration Theoretical Analysis of Two-Dimensional Photoelectric Conversion Material WSe₂
p.16

Sintering Effect on Magnetite-to-Hematite Structural Conversion of As-Prepared Fe²⁺Cr_0.2Fe_1.8O₄Nano-Ferrites
p.24

Lead Free Bi_1/2Na_1/2TiO₃-CoFe₂O₄ Magnetoelectric Nanoparticulate Composite Thin Films Prepared by Chemical Solution Deposition Method
p.30

Mg-La Co-Doped TiO₂ as Compact Layer for High Efficient Dye-Sensitized Solar Cells
p.34

Effects of Gold Nanoparticles on Fluorescence Polarization and Emission Spectra of Rhodamine 6G Solution
p.39

HomeKey Engineering MaterialsKey Engineering Materials Vol. 765Surface Functionalization of Two-Dimensional...

Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions

Abstract:

Large-scale fabrication of two-dimensional (2D) nanomaterials by vapor phase depostion enabled the establishment of vertically aligned semiconductor herterojunctions. However, the property modulation of 2D semiconductor heterojunctions remains chanlleging within such thin layers. Herein, we proposed a general strategy towards the surface functionlization of 2D semiconductor heterojunctions simply by two-step atomic layer deposition (ALD) process with following post-annealing. TiO₂-WO₃ heterojunction was taken as a typical case in this work and its electrochemical properties were significantly improved via the proposed strategy. This strategy may open a new pathway for facile functionalization of 2D nanomaterials for the energy conversion and storage devices.