Study on High Quality Thermal Stress Cleavage of Thick Sapphire Wafer

Tomoya Kawabe; Tatsuaki Furumoto; Yohei Hashimoto; Tomohiro Koyano; Yuzo Ochi; Kentaro Oguchi; Yuji Chino; Akira Hosokawa

doi:10.4028/www.scientific.net/KEM.825.39

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 825Study on High Quality Thermal Stress Cleavage of...

Study on High Quality Thermal Stress Cleavage of Thick Sapphire Wafer

Abstract:

This study deals with high quality thermal stress cleavage of thick sapphire wafer with thickness of 5 mm. The influence of the distance from the edge to the initial crack, laser power, and plane orientation on the cleavage characteristics was experimentally investigated. The results indicate that the surface waviness W_a at the cleaved surface was influenced by the distance from the edge. A cleaved surface with good surface characteristics was obtained by cleaving with low laser power. The cleavage direction also affects the cleaved surface characteristics.

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Periodical:

Key Engineering Materials (Volume 825)

Pages:

39-44

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.825.39

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Online since:

October 2019

Authors:

Tomoya Kawabe*, Tatsuaki Furumoto, Yohei Hashimoto, Tomohiro Koyano, Yuzo Ochi, Kentaro Oguchi, Yuji Chino, Akira Hosokawa

Keywords:

CO₂ Laser, Thermal Stress Cleavage, Thick Sapphire Wafer

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