Characterization of Zinc Oxide Semiconductor Thin Film Treated with Cold Plasma

Abstract:

In this study, the photovoltaic properties of zinc oxides are investigated. Different stoichiometries of zinc oxide can be made using vacuum deposition. Thermally evaporated zinc produces thin films of ZnO composed of orthorhombic and tetragonal phases that define the material's characteristics and performance. On-thermal plasma has removed a very thin layer from the surface of the thin film, known as non-thermal plasma, and made a surface cleanup. Measurements of the Atomic Force Microscope (AFM) show that the value of the granular volume rate increases when the duration of exposure to non-heat plasma increases. Measurements of the Atomic Force Microscope (AFM) show that there is an increase in thin film surface roughness values (Roughness, Sq), as well as the square root of the average roughness of the thin film surface (RMS), and this increase in roughness appears as the duration of exposure to non-thermal plasma increases.

• Periodical: Key Engineering Materials (Volume 936)
• Pages: 93-103
• DOI: https://doi.org/10.4028/p-g2w16n
• Online since: December 2022
• Authors: Khalid Alzamili*, Hamzah A. Lafta
• Keywords: Cold Plasma, Semiconductor, Thin Film, Zinc Oxide

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