Temperature Dependence of the Positron Annihilation Parameters in III-VI Layered Semiconductors

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

961-964

DOI:

10.4028/www.scientific.net/MSF.105-110.961

Citation:

R.M. de la Cruz et al., "Temperature Dependence of the Positron Annihilation Parameters in III-VI Layered Semiconductors ", Materials Science Forum, Vols. 105-110, pp. 961-964, 1992

Online since:

January 1992

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