Positron Trapping Model in N-Type Semiconductors with Vacancies

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

985-988

Citation:

M. Doyama, "Positron Trapping Model in N-Type Semiconductors with Vacancies ", Materials Science Forum, Vols. 105-110, pp. 985-988, 1992

Online since:

January 1992

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