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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Positron Trapping Model in N-Type Semiconductors...

Positron Trapping Model in N-Type Semiconductors with Vacancies

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

985-988

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.985

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Cite this paper

Online since:

January 1992

Authors:

Masao Doyama

Keywords:

Charged Vacancies, P-Type Semiconductors, Semiconductor, Trapping, Vacancy

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Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

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