Influence of the Dissociation into Shockley Partials on the Dislocation Transmission across [011] Tilt Grain Boundaries in Elemental Semiconductors

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Periodical:

Materials Science Forum (Volumes 126-128)

Edited by:

Ph. Komninou and A. Rocher

Pages:

491-494

Citation:

H.M. Michaud et al., "Influence of the Dissociation into Shockley Partials on the Dislocation Transmission across [011] Tilt Grain Boundaries in Elemental Semiconductors ", Materials Science Forum, Vols. 126-128, pp. 491-494, 1993

Online since:

January 1993

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$38.00

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