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HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Positron Trapping Model in N-Type Semiconductors...

Positron Trapping Model in N-Type Semiconductors with Vacancies

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

343-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.343

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Online since:

November 1994

Authors:

Masao Doyama

Keywords:

N-Type Semiconductors, Positron Trapping, Trapping, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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