Positron Trapping Model in N-Type Semiconductors with Vacancies

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Periodical:

Materials Science Forum (Volumes 175-178)

Edited by:

Yuan-Jin He, Bi-Song Cao and Y.C. Jean

Pages:

343-346

Citation:

M. Doyama "Positron Trapping Model in N-Type Semiconductors with Vacancies", Materials Science Forum, Vols. 175-178, pp. 343-346, 1995

Online since:

November 1994

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$38.00

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