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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Positron Annihilation Study of Defects in High...

Positron Annihilation Study of Defects in High Energy Heavy Ion Implanted III-V Compound Semiconductors

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

518-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.518

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Online since:

September 1997

Authors:

Z.Q. Chen, L. Ma, Z. Wang, J. Zhu, X.W. Hu, Shao Jie Wang

Keywords:

Defect, Ion Implantation, Positron Annihilation, Semiconductor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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