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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Depth Profiling of Defects in Argon Irradiated...

Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

650-652

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.650

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Online since:

September 1997

Authors:

G. Amarendra, G. Venugopal Rao, K.G.M. Nair, B. Viswanathan

Keywords:

Depth-Profiling, Ion Beam Induced Damage, Positron Beams, Semiconductor

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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