Paper Titles

Crystal Growth and Epitaxy from Solutions I. Fundamentals of Growth from Solutions
p.175

Crystal Growth and Epitaxy from Solutions II. Practical Aspects of Growth from Aqueous Solutions and from High-Temperature Solutions
p.191

Crystal Growth and Epitaxy from Solutions III. Special Topics of Growth from Solutions
p.201

Molecular Beam Epitaxy and Low-Dimensional Structures
p.207

Morphological Stability in Molecular Beam Epitaxial Growth
p.223

Protein Crystallization: Specific Phenomena and General Insights on Crystallization Kinetics
p.241

Rapid Solidification in Silicon
p.257

Some Aspects of Crystal Growth of Minerals
p.269

Structural Defects in Crystals and Techniques for Their Detection
p.291

HomeMaterials Science ForumMaterials Science Forum Vols. 276-277Rapid Solidification in Silicon

Rapid Solidification in Silicon

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Theoretical and Technological Aspects of Crystal Growth

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Periodical:

Materials Science Forum (Volumes 276-277)

Pages:

257-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.276-277.257

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Online since:

March 1998

Authors:

S.U. Campisano

Keywords:

Laser Annealing, Segregation, Silicon

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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