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HomeMaterials Science ForumMaterials Science Forum Vols. 297-298Dependence of Electron Energy Relaxation on...

Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

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Periodical:

Materials Science Forum (Volumes 297-298)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.297-298.155

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Online since:

December 1998

Authors:

A. Matulionis, V. Aninkevičius, J. Liberis, I. Matulionienė, J. Berntgen

Keywords:

2DEG, Confined Phonons, Energy Relaxation, Hot Electrons, InAlAs/InGaAs, Lattice-Matched and Strained Channels, Microwave Noise

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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