Population Inversion and Intraband IR Lasing under Hot Electron Intervalley Transfer in GaAs-AlAs Like MQW Heterostructures

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Periodical:

Materials Science Forum (Volumes 297-298)

Edited by:

Steponas Asmontas and Adolfas Dargys

Pages:

221-224

DOI:

10.4028/www.scientific.net/MSF.297-298.221

Citation:

V.Y. Aleshkin et al., "Population Inversion and Intraband IR Lasing under Hot Electron Intervalley Transfer in GaAs-AlAs Like MQW Heterostructures", Materials Science Forum, Vols. 297-298, pp. 221-224, 1999

Online since:

December 1998

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