Paper Titles

Effect of Segment Length on Maximum Power of 2-Segmented n-PbTe with Different Carrier Concentrations
p.665

The New Mechanism of Abnormally High Energy Transferring in Functionally Graded Materials
p.669

Electric Properties of Ni/n-PbTe and Ni/p-Pb_0.5Sn_0.5Te Joined by Plasma Activated Sintering
p.675

Graded FeSi₂ Thermoelectric Elements - Preparation by Intermixed Additives Sintering
p.681

Thermoelectric Properties Control due to Doping Level and Sintering Conditions for FGM Thermoelectric Element
p.687

Expansion of Utilizing Temperature Range of Bi₂Te₃/PbTe by FGM Forming
p.693

Thermoelectric Properties of Pb_1-xSn_xTe FGM by Liquid Phase Diffusion Bonding
p.699

Thermoelectric Properties on Zn⁺ Ion Implantation into Polycrystalline Lead Telluride
p.704

Effects of Sn⁺ Ion Implantation and Post-Implantation Annealing on the Thermoelectric Properties of n-Type PbTe in FGM Design
p.711

HomeMaterials Science ForumMaterials Science Forum Vols. 308-311Thermoelectric Properties Control due to Doping...

Thermoelectric Properties Control due to Doping Level and Sintering Conditions for FGM Thermoelectric Element

Article Preview

Abstract:

You might also be interested in these eBooks

Functionally Graded Materials

Info:

Periodical:

Materials Science Forum (Volumes 308-311)

Pages:

687-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.308-311.687

Citation:

Cite this paper

Online since:

May 1999

Authors:

T. Kajikawa, K. Shida, K. Shiraishi, M. Ohmori, Toshio Hirai

Keywords:

Hot-Press Sintering, Thermoelectric Element, Zone Traveling Hot-Press Sintering

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: