Interface Defects of Al/GaAs(100) Detected by Positron Annihilation Induced Auger Electron Spectroscopy (PAES)

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

621-623

Citation:

W.C. Chen et al., "Interface Defects of Al/GaAs(100) Detected by Positron Annihilation Induced Auger Electron Spectroscopy (PAES)", Materials Science Forum, Vols. 363-365, pp. 621-623, 2001

Online since:

April 2001

Export:

Price:

$38.00