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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Interface Defects of Al/GaAs(100) Detected by...

Interface Defects of Al/GaAs(100) Detected by Positron Annihilation Induced Auger Electron Spectroscopy (PAES)

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

621-623

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.621

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Online since:

April 2001

Authors:

W.C. Chen, N.G. Fazleev, J.L. Fry, Alex H. Weiss

Keywords:

Annihilation, Auger, Defect, Interface, Metal, Positron, Semiconductor

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Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

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