Positron and Positronium Annihilation in Low-Dielectric-Constant Films Studied by a Pulsed Positron Beam

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Periodical:

Materials Science Forum (Volumes 445-446)

Edited by:

Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito

Pages:

224-228

DOI:

10.4028/www.scientific.net/MSF.445-446.224

Citation:

R. Suzuki et al., "Positron and Positronium Annihilation in Low-Dielectric-Constant Films Studied by a Pulsed Positron Beam", Materials Science Forum, Vols. 445-446, pp. 224-228, 2004

Online since:

January 2004

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[1] “The International Technology Roadmap for Semiconductors”, (Semiconductor Industry Association, San Jose, CA, 2001).

[2] A. van Veen, H. Schut, P.E. Mijnarends, “Positron Beams and their applications” edited by P. Coleman (World Scientific, Singapore, 2000).

[3] R. Suzuki, Y. Kobayashi, T. Mikado, A. Matsuda, et al., Jpn. J. Appl. Phys. 30, (1991), p.2438.

[4] R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, et al., Phys. Rev. B 49, (1994) p.17484.

[5] D.W. Gidley, W.E. Frieze, T.L. Dull. A.F. Yee, E.T. Ryan, H. -M. Ho, Phys. Rev. B. 60, (1999), p. R5157.

DOI: 10.1103/physrevb.60.r5157

[6] M.P. Petkov, M. H. Weber, K.G. Lynn, K.P. Rodbell Appl. Phys. Lett. 77 (2000), p.2470, Appl. Phys. Lett. 79 (2001), p.3384.

[7] R. Suzuki, T. Ohdaira, Y. Shioya, T. Ishimaru, Jpn. J. Appl. Phys. 40 (2001) , p. L414-416.

[8] A. Uedono, Z. Q. Chen, R. Suzuki, T. Ohdaira, et al., J. Appl. Phys. 90 (2001), p.2498.

[9] J. Xu, J. Moxom, S. Yang, R. Suzuki, T. Ohdaira, Chem. Phys. Lett. 364 (2002), p.309.

[10] K. Ito, Y. Kobayashi, K. Hirata, H. Togashi, R. Suzuki and T. Ohdaira , Radiat. Phys. & Chem, 68 (2003), p.435.

[11] S.W.H. Eijt, A. van Veen, C.V. Falub, et. al., J. Phys. & Chem, 68 (2003), p.357.

[12] Y. Shioya, H. Ikakura, T. Ishimaru, et al., Proc. VLSI Multilevel Interconnection Technology Conf. 2000 (VMIC Conference Executive Committee, U.S. A), (2000), p.143.

[13] T. Ohdaira, R. Suzuki, H. Shirataki and S. Matsuno, in this proceedings.

[14] K. Ito, H. Nakanishi, Y. Ujihira. J. Phys. Chem. B, 103, (1999), p.4555.

[15] R. Suzuki, T. Ohdaira, Y. Kobayashi, K. Ito, et al., Radiat. Phys. & Chem, 68 (2003), p.339.

[16] R. S. Yu, Y. Kobayashi, T. Ohdaira, R. Suzuki, K. Ito, K. Hirata and K. Sato, in this proceedings.

[17] R. Krause-Rehberg and H.S. Leipner, Positron Annihilation in Semiconductors, (Springer-Verlag, Berlin, 1999). ��� ��� ��� ��� ��� ��� � �� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ��� ���� ��� ���� ���� � ��� ��� ��� ��� � � � � �������� ������������ � Fig. 8 Positron lifetime spectra and three gamma fraction calculated by the Monte Carlo method. The mean implantation depth is 300 nm. The parameter D and trapping condisions are same as those in Fig. 7(a).

DOI: 10.1007/978-3-662-03893-2_3

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