Determination of Diffusion Kinetic Parameters and Potential Barrier Height at the Grain Boundary of the Semiconducting SrTiO3 Ceramics

Abstract:

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The chemical and electrical characteristics of the grain boundary of the polycrystalline semiconducting SrTiO3 ceramics, which were synthesized by hot-press sintering Na-coated semiconducting SrTiO3 powders, were investigated in terms of process parameters such as sintering temperature. Diffusion kinetic parameters such as diffusion coefficients and activation energy of diffusing ions at particular heat-treatment conditions were obtained by fitting experimental data with computer-simulated results as well as electrical features near the grain boundary of the ceramics.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

733-736

DOI:

10.4028/www.scientific.net/MSF.449-452.733

Citation:

M. B. Park and N. H. Cho, "Determination of Diffusion Kinetic Parameters and Potential Barrier Height at the Grain Boundary of the Semiconducting SrTiO3 Ceramics", Materials Science Forum, Vols. 449-452, pp. 733-736, 2004

Online since:

March 2004

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$35.00

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