Determination of Diffusion Kinetic Parameters and Potential Barrier Height at the Grain Boundary of the Semiconducting SrTiO₃ Ceramics

Abstract:

The chemical and electrical characteristics of the grain boundary of the polycrystalline semiconducting SrTiO₃ ceramics, which were synthesized by hot-press sintering Na-coated semiconducting SrTiO₃ powders, were investigated in terms of process parameters such as sintering temperature. Diffusion kinetic parameters such as diffusion coefficients and activation energy of diffusing ions at particular heat-treatment conditions were obtained by fitting experimental data with computer-simulated results as well as electrical features near the grain boundary of the ceramics.

• Periodical: Materials Science Forum (Volumes 449-452)
• Pages: 733-736
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.449-452.733
• Online since: March 2004
• Authors: Myung Beom Park, Nam Hee Cho
• Keywords: Diffusion Kinetic Parameters, Grain Boundary, Potential Barrier Height, SrTiO₃

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