Preparation and Properties of GaAs Single Crystal Grown from Melt under Microgravity Conditions

Abstract:

Article Preview

Info:

Periodical:

Edited by:

N.B. Singh, V. Laxmanan and E.W. Collings

Pages:

183-195

DOI:

10.4028/www.scientific.net/MSF.50.183

Citation:

L. Y. Lin and D. A. Da, "Preparation and Properties of GaAs Single Crystal Grown from Melt under Microgravity Conditions", Materials Science Forum, Vol. 50, pp. 183-195, 1989

Online since:

January 1991

Export:

Price:

$35.00

In order to see related information, you need to Login.