A Study of Ga2O3 Nanomaterials Synthesized by the Thermal Evaporation of GaN Powders

Abstract:

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We have synthesized gallium oxide (Ga2O3) nanomaterials at two different growth temperatures on iridium (Ir)-coated substrates by thermal evaporation of GaN powders. The products consist mainly of nanobelts, with some additional nanosheets. The nanobelts were of a single-crystalline monoclinic Ga2O3 structure. The broad emission photoluminescence band of 900°C-products had a different peak position from that of the 970°C-products.

Info:

Periodical:

Materials Science Forum (Volumes 510-511)

Edited by:

Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee

Pages:

654-657

DOI:

10.4028/www.scientific.net/MSF.510-511.654

Citation:

H. W. Kim et al., "A Study of Ga2O3 Nanomaterials Synthesized by the Thermal Evaporation of GaN Powders", Materials Science Forum, Vols. 510-511, pp. 654-657, 2006

Online since:

March 2006

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Price:

$35.00

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