A Study of Ga2O3 Nanomaterials Synthesized by the Thermal Evaporation of GaN Powders
We have synthesized gallium oxide (Ga2O3) nanomaterials at two different growth temperatures on iridium (Ir)-coated substrates by thermal evaporation of GaN powders. The products consist mainly of nanobelts, with some additional nanosheets. The nanobelts were of a single-crystalline monoclinic Ga2O3 structure. The broad emission photoluminescence band of 900°C-products had a different peak position from that of the 970°C-products.
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
H. W. Kim et al., "A Study of Ga2O3 Nanomaterials Synthesized by the Thermal Evaporation of GaN Powders", Materials Science Forum, Vols. 510-511, pp. 654-657, 2006