Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature

Abstract:

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The oxidation behavior and electrical resistivity of reaction-bonded silicon carbide (RB-SiC) at high temperature (900 °C) had been studied in this paper. The results showed that the weight of RB-SiC would be increased when it was oxidized at 900. The relationship between the weight-gain of RB-SiC and oxidation times followed the parabolic curve. The oxidation resistance of RB-SiC at 900 could increased by the increase of SiC particles sizes. But the electrical resistivity of RB-SiC had not affected by the oxidation at 900. The oxidation mechanism of RB-SiC and the affecting factor on oxidation of RB-SiC were analyzed and discussed.

Info:

Periodical:

Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee

Pages:

475-478

DOI:

10.4028/www.scientific.net/MSF.544-545.475

Citation:

Z. L. Lu et al., "Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature", Materials Science Forum, Vols. 544-545, pp. 475-478, 2007

Online since:

May 2007

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Price:

$35.00

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