Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature

Zhen Lin Lu; Hui Xie; Ji Qiang Gao; Zhi Hao Jin

doi:10.4028/www.scientific.net/MSF.544-545.475

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HomeMaterials Science ForumMaterials Science Forum Vols. 544-545Study on the Oxidation and Electrical Resistivity...

Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature

Abstract:

The oxidation behavior and electrical resistivity of reaction-bonded silicon carbide (RB-SiC) at high temperature (900 °C) had been studied in this paper. The results showed that the weight of RB-SiC would be increased when it was oxidized at 900. The relationship between the weight-gain of RB-SiC and oxidation times followed the parabolic curve. The oxidation resistance of RB-SiC at 900 could increased by the increase of SiC particles sizes. But the electrical resistivity of RB-SiC had not affected by the oxidation at 900. The oxidation mechanism of RB-SiC and the affecting factor on oxidation of RB-SiC were analyzed and discussed.