Twinning, Dislocations and Grain Size in NanoSPD Materials Determined by X-Ray Diffraction

Abstract:

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High resolution X-ray line profile analysis is sensitive to crystallite size, dislocation densities and character, and to planar defects, especially stacking faults or twinning. The different effects of microstructure features can be evaluated separately on the basis of the different corresponding profile functions and the different hkl dependences of line broadening. Profiles of faulted crystals consist of sub-profiles broadened and shifted according to different hkl conditions. The systematic analysis of the breadts and shifts of sub-profiles enables X-ray line profile analysis by using defect related profile functions corresponding to: (i) size, (ii) strain and (iii) planar faults, respectively. It is shown that twinning can either be enhanced or weakened by severe plastic deformation.

Info:

Periodical:

Materials Science Forum (Volumes 584-586)

Edited by:

Yuri Estrin and Hans Jürgen Maier

Pages:

571-578

DOI:

10.4028/www.scientific.net/MSF.584-586.571

Citation:

T. Ungár et al., "Twinning, Dislocations and Grain Size in NanoSPD Materials Determined by X-Ray Diffraction", Materials Science Forum, Vols. 584-586, pp. 571-578, 2008

Online since:

June 2008

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Price:

$35.00

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