Positron Beam Study of Co Doped ZnO Films Prepared by PLD

Abstract:

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Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400°C, 600°C, 700°C on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples.

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Periodical:

Edited by:

S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean

Pages:

102-104

DOI:

10.4028/www.scientific.net/MSF.607.102

Citation:

H. F. Ren et al., "Positron Beam Study of Co Doped ZnO Films Prepared by PLD", Materials Science Forum, Vol. 607, pp. 102-104, 2009

Online since:

November 2008

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$35.00

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