Paper Titles

Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/Al_xGa_1-xAs Heterostructures
p.397

Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs
p.403

Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs
p.409

Characterization of Fast Neutron Irradiated GaAs Films by Photoluminescence Spectroscopy
p.415

Thermodynamic Study of Annealing Process of Si-Implanted GaAs
p.421

Theoretical Description of Donor Bistability in CdF₂
p.427

DX-Like Centres in Semiconductors: Metastability, Bistability and Negative U
p.433

Magneto-Optical Investigations of DX Centres in Al_xGa_1-xAs
p.443

Localized Electronic States with A₁ Symmetry of Substitutional Impurities - are they DX Centres?
p.449

HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Thermodynamic Study of Annealing Process of...

Thermodynamic Study of Annealing Process of Si-Implanted GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Shallow Impurities in Semiconductors IV

Info:

Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

421-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.421

Citation:

Cite this paper

Online since:

January 1991

Authors:

M. Ichimura, T. Wada, A. Ito, A. Usami

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: