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Preparation and Characterization of Porous Silicon in HF-AgNO3 Solution

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Abstract:

Porous silicon (PS) of uniform structure was prepared by electroless silver deposition on surface of silicon at near room temperature in HF-AgNO3 system solution. Morphology of PS was characterized by scanning electron microscopy. The results showed that the diameter of hole was 1-2μm and holes distributed regularly. The ethylene diamine tetra acetic acid (EDTA) was an important additive to control the etching rate of silicon, which is of great significance to research the mechanism of porous silicon formation. Furthermore, photoluminescence property of PS was characterized.

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Periodical:

Materials Science Forum (Volumes 663-665)

Pages:

292-295

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.292

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Online since:

November 2010

Authors:

Wen Bin Yang, Jun Wun, Fang Fang He, Xiao Hong Tang, Yuan Lin Zhou

Keywords:

Mechanism, Morpholoy, Photoluminescence (PL), Porous Silicon (PS), Preparation

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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