Effects of O2 Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation

Chen Yang; Zhi Ming Chen; Ying Xue Xi; Tao Lin

doi:10.4028/www.scientific.net/MSF.663-665.413

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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Effects of O2 Ambient on Structural, Optical and...

Effects of O₂ Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation

Abstract:

In this paper, thin HfO2 films were grown by using E-beam evaporation technique in vacuum and O2 ambient, respectively. Effects of O2 ambient on structural, optical and electrical properties of the HfO2 films were investigated by deploying x-ray photoelectron spectroscopy, ultraviolet visible spectroscopy, I-V and C-V characteristics. Results show that the O2 ambient deposited HfO2 films exhibited excellent structural, optical and electrical properties as compared with vacuum ambient HfO2 films, which especially performs a low content of metal Hf, a high transmittance, a low leakage current and a high dielectric constant.

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Materials Science Forum (Volumes 663-665)

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413-416

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.663-665.413

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Online since:

November 2010

Authors:

Chen Yang, Zhi Ming Chen, Ying Xue Xi, Tao Lin

Keywords:

Electrical Properties, Electron Beam Evaporation, HFO₂ Thin Film, Optical Property, Structure

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