Effects of O2 Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation

Abstract:

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In this paper, thin HfO2 films were grown by using E-beam evaporation technique in vacuum and O2 ambient, respectively. Effects of O2 ambient on structural, optical and electrical properties of the HfO2 films were investigated by deploying x-ray photoelectron spectroscopy, ultraviolet visible spectroscopy, I-V and C-V characteristics. Results show that the O2 ambient deposited HfO2 films exhibited excellent structural, optical and electrical properties as compared with vacuum ambient HfO2 films, which especially performs a low content of metal Hf, a high transmittance, a low leakage current and a high dielectric constant.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

413-416

DOI:

10.4028/www.scientific.net/MSF.663-665.413

Citation:

C. Yang et al., "Effects of O2 Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation", Materials Science Forum, Vols. 663-665, pp. 413-416, 2011

Online since:

November 2010

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Price:

$35.00

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