Performance of Piezoelectrets Made of Non-Porous Polytetrafluoroethylene and Fluoroethylenepropylene Layers

Abstract:

The thermal stability of piezoelectric d₃₃ coefficients and charge dynamics in the piezoelectret films with tailored microstructure, made of non-porous polytetrafluoroethylene (PTFE) and fluoroethylenepropylene (FEP) layers, are investigated by the measurements of the isothermal decay of piezoelectric d₃₃ coefficients at elevated temperatures and the analysis of thermally stimulated discharge (TSD) current spectra in short circuit, respectively. The results show that the quasi-static piezoelectric d₃₃ coefficient up to 300 pC/N is achieved and its Young's modulus is about 0.28 MPa. The d₃₃ values in the present studied films show improved thermal stability compared with the films without regular microstructure. The drift path for the most of detrapped charges in the films is through the solid dielectric layer.

• Periodical: Materials Science Forum (Volume 687)
• Pages: 343-347
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.687.343
• Online since: June 2011
• Authors: Zhuan Lan Sun, Xiao Qing Zhang, Gong Xun Cao, Ke Xing Lou, Zhong Fu Xia
• Keywords: Charge Dynamic, Piezoelectret, Piezoelectricity, Tailored Structure, Thermal Stability

References

[1] S. Bauer-Gogonea and S. Bauer: Handbook of Advanced Electronic and Photonic Materials, Vol. 10 (1992), p.185.

[2] G.M. Sessler and R. Gerhard-Multhaupt (Eds. ): Electrets （3rd Ed., Laplacian Press, Morgan Hill, CA, 1999).

[3] M. Lindner, H. Hoislbauer, R. Schwo¨diauer, S. Bauer-gogonea and S. Bauer: IEEE Trans Dielectr. Electr. Insul. Vol. 11 (2004), p.255.

DOI: 10.1109/tdei.2004.1285895

[4] M. Wegener and S. Bauer: ChemPhysChem Vol. 6 (2005), p.1014.

[5] X. Zhang, G.M. Sessler and J. Hillenbrand: J Electrostat. Vol. 65 (2007), p.94.

[6] X. Zhang, J. Hillenbrand and G.M. Sessler: Appl. Phys. Lett. Vol. 85 (2004), p.1226.

[7] M. Paajanen, M. Wegener, and R. Gerhard-Multhaupt: J. Phys. D: Appl. Phys. Vol. 34 (2001), p.2482.

[8] X. Zhang, J. Hillenbrand and G.M. Sessler: J. Phys. D: Appl. Phys. Vol. 37 (2004), p.2146.

[9] J. Hillenbrand, X. Zhang, Y. Zhang and G.M. Sessler: Annual Report on IEEE Conference on Electrical Insulation and Dielectric Phenomena, IEEE, NY (2003), p.40.

DOI: 10.1109/ceidp.2003.1254789

[10] W. Künstler, Z. Xia, T. Weinhold, A. Pucher and R. Gerhard-Multhaupt: Appl. Phys. A Vol. 70 (2000), p.5.

[11] G.S. Neugschwandtner, R. Schwödiauer, S. Bauer-Gogonea and S. Bauer: Appl. Phys. A Vol. 70 (2000), p.1.

[12] R. Schwödiauer, G.S. Neugschwandtner, K. Schrattbauer, M. Lindner, M. Vieyt, S. Bauer-Gogonea and S. Bauer: IEEE Trans. Dielectr. Electric. Insul Vol. 7 (2000), p.578.

DOI: 10.1109/94.868080

[13] Z.L. Sun, X.Q. Zhang, G.X. Cao, X.W. Wang and Z.F. Xia: Acta Phys. Sin. Vol. 59 (2010), p.5067.

[14] J. Hillenbrand and G.M. Sessler: IEEE Trans. Dielectr. Electr. Insul. Vol. 11 (2004), p.72.

[15] J. Hillenbrand and G.M. Sessler: IEEE Trans. Dielectr. Electr. Insul. Vol. 7 (2000), p.537.

[16] J. Huang, X.Q. Zhang, Z.F. Xia, and X.W. Wang: J. Appl. Phys. Vol. 103 (2008), 084111.

[17] X.Q. Zhang, J. Hillenbrand and G.M. Sessler: J. Appl. Phys. Vol. 101 (2007), 054114.