A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser

Abstract:

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We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.

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Periodical:

Edited by:

Hyungsun Kim, Jian Feng Yang, Chuleol Hee Han, Somchai Thongtem and Soo Wohn Lee

Pages:

9-12

DOI:

10.4028/www.scientific.net/MSF.695.9

Citation:

Y. C. Kim et al., "A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser", Materials Science Forum, Vol. 695, pp. 9-12, 2011

Online since:

July 2011

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$35.00

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