Characterization of Silicon Kerf and the Effect of Grinding on the Synthesis of SiC Powder

Woo Teck Kwon; Soo Ryong Kim; Y. Kim; Yoon Joo Lee; Ji Yeon Won; Tae Gyung Ko; Sea Cheon Oh

doi:10.4028/www.scientific.net/MSF.761.69

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HomeMaterials Science ForumMaterials Science Forum Vol. 761Characterization of Silicon Kerf and the Effect of...

Characterization of Silicon Kerf and the Effect of Grinding on the Synthesis of SiC Powder

Abstract:

Characterization of silicon kerf from photovoltaic silicon-wafer production was carried out. Also, SiC powder was synthesized using high purity silicon kerf by varying grinding conditions. With increase of grinding time, surface of the silicon was oxidized to form silicon oxide. Also, it was observed that the unreacted silicon oxide and free silicon amount in the SiC powder increases with an increasing grinding times, even though silicon particle size of the starting material is decreased.

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Periodical:

Materials Science Forum (Volume 761)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.761.69

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Online since:

July 2013

Authors:

Woo Teck Kwon, Soo Ryong Kim, Y. Kim, Yoon Joo Lee, Ji Yeon Won, Tae Gyung Ko, Sea Cheon Oh

Keywords:

Grinding, Photovoltaic Silicon, Recycling, SiC Powder, Synthesis

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