Surface Passivation Effect of Hydrogen and Methyl on the Structural and Electronic Properties of Silicon Quantum Dots: Density Functional Calculation

Abstract:

We have carried out a series of DFT calculations to investigate changes on the structural and electronic properties of Silicon (Si) quantum dots as a function of surface passivation. In particular, we have study non-polar passivation effect of hydrogen (H) and methyl (CH₃) at the surface of quantum dots. From geometry optimization result, we find that clusters with reconstructed surfaces a complete methyl passivation is possible and steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. On the electronic properties point of view, it is noticed for small nanocrystals, the presence of mini-gaps are more pronounced which can limit the non-radiative relaxation of excitons. Obviously, methyl passivation weakly affects the band gap values of silicon quantum dots, while it substantially decreases the band gap and reduce mini-gap appearance compared to hydrogen passivation Si QDs. On the basis of our results we propose that methyl terminated quantum dots may be size selected taking advantage of the reduction on mini-gap and the localization of electron as a function of the cluster size.

• Periodical: Materials Science Forum (Volume 846)
• Pages: 375-382
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.846.375
• Online since: March 2016
• Authors: Muhammad Mus-'Ab Anas Mohd Anas*, Geri Gopir
• Keywords: Density of State, DFT, Silicon Quantum Dots, Surface Passivation Effect

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