Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer

Petr Machac; Ondrej Hejna

doi:10.4028/www.scientific.net/MSF.919.207

Paper Titles

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The Influence of Laser Beam Technological Parameters on the Polymethyl Methacrylate Surface Quality
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Using of 3D Printing Technology in Low Cost Prosthetics
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Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer
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The Application of Grinding of Ceramic Materials
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Rapid Prototyping Technology for Special Pressure Vessels
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HomeMaterials Science ForumMaterials Science Forum Vol. 919Graphene Growth by Transfer-Free CVD Method Using...

Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer

Abstract:

Graphene has been long considered for application in electronics manufacturing due to its extraordinary electronic, mechanical and thermal properties. This paper focuses on the graphene preparation onto dielectric substrate using transfer-free chemical vapour deposition (CVD) method with an intermediate catalytic metal layer (cobalt, nickel). Graphene layers were formed via segregation mechanism at temperatures in the range of 850 - 1050 °C onto the metal-dielectric boundary. Evaluated Raman spectra, which reveal the number of graphene layers and their defectivity suggested, that thinner metal layer and balanced ratio of H₂:CH₄ yield the best results for both cobalt and nickel layer. Spectra showed low amount of defects and the average number of carbon layers between 2-3, however, single-layer graphene (SLG) samples were also prepared. Scanning electron microscopy images showed that graphene domains on larger scale are not fully continuous.

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Periodical:

Materials Science Forum (Volume 919)

Pages:

207-214

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.919.207

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Online since:

April 2018

Authors:

Petr Machac*, Ondrej Hejna

Keywords:

Cold-Wall Reactor, CVD Process, Graphene, Transfer-Free Process

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