Formation of Silicon Carbide Grains Structure and Their Growth in Polycrystalline SiC Obtained by the Reaction-Sintering Technique

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Periodical:

Materials Science Forum (Volumes 94-96)

Edited by:

G. Abbruzzese and P. Brozzo

Pages:

829-838

DOI:

10.4028/www.scientific.net/MSF.94-96.829

Citation:

A.P. Gashin and G.S. Oleinik, "Formation of Silicon Carbide Grains Structure and Their Growth in Polycrystalline SiC Obtained by the Reaction-Sintering Technique ", Materials Science Forum, Vols. 94-96, pp. 829-838, 1992

Online since:

January 1992

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