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HomeMaterials Science ForumMaterials Science Forum Vol. 984Bi-Polar Synaptic Behavior of Pt/SiOx:Ag/TiOx/p++-...

Bi-Polar Synaptic Behavior of Pt/SiO_x:Ag/TiO_x/p⁺⁺- Si Memristor

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Abstract:

Recently, by inserting a TiO_x thin layer, we have fabricated a memristive device as Pt/SiO_x:Ag/TiO_x/p⁺⁺-Si which features a better bi-polar gradually resistive switching under positive and negative electrical bias. Different synaptic functions including potentiation, depression, short-term potentiation and the transition from short-term memory (STM) to long-term memory (LTM) using suitably programmed voltage pulse have been implemented successfully in the memristive device. It is indicated that the Pt/SiO_x:Ag/TiO_x/p⁺⁺-Si memristor can be used as a promising emulator for biological synapse, which could have great potential for brain-inspired neuromorphic computing.

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Periodical:

Materials Science Forum (Volume 984)

Pages:

104-109

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.984.104

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Online since:

April 2020

Authors:

Yu Han Yuan, Nasir Ilyas, Zhi Hui Qi, Dong Yang Li, Xiang Dong Jiang, Wei Li*

Keywords:

Resistive Switching, SiO_x:Ag/TiO_x Memristive Layer, Synaptic Behavior

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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