Synthesis and Characterization of Ga2O3 Nanowires
Ga2O3 nanowires were prepared by vapor-solid process in atmosphere, using commercial Ga ingot and Ga2O3 powder or Al2O3 powder as the starting materials. The influence of preparation conditions such as temperature and starting material on the products was studied. The composition and morphology of the products were characterized by XRD, SEM/EDX, TEM, and HRTEM. The formation mechanism of the products was proposed.
Chunli BAI, Sishen XIE, Xing ZHU
K. F. Cai et al., "Synthesis and Characterization of Ga2O3 Nanowires", Solid State Phenomena, Vols. 121-123, pp. 299-302, 2007