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Synthesis and Characterization of Ga2O3 Nanowires
Abstract:
Ga2O3 nanowires were prepared by vapor-solid process in atmosphere, using commercial Ga ingot and Ga2O3 powder or Al2O3 powder as the starting materials. The influence of preparation conditions such as temperature and starting material on the products was studied. The composition and morphology of the products were characterized by XRD, SEM/EDX, TEM, and HRTEM. The formation mechanism of the products was proposed.
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299-302
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March 2007
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© 2007 Trans Tech Publications Ltd. All Rights Reserved
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