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HomeSolid State PhenomenaSolid State Phenomena Vol. 128Luminescence of Doped Nanoparticles of Wide Band...

Luminescence of Doped Nanoparticles of Wide Band Gap II-VI Compounds

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Abstract:

Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles.

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Periodical:

Solid State Phenomena (Volume 128)

Pages:

123-134

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.128.123

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Online since:

October 2007

Authors:

Marek Godlewski, S. Yatsunenko, M. Zalewska, A. Kłonkowski, Tomas Strachowski, Witold Łojkowski

Keywords:

Doping, II-VI Semiconductors, Luminescence, Nanoparticle, Rare Earth Ion, Transition Metal Ions, Wide Band Gap Oxides

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Bruchez and M. Moronne: Science Vol. 281 Issue 5385 (1998), p. (2013).

[2] W.C.W. Chan and S.M. Nie: Science Vol. 281 Issue 5385 (1998), p. (2016).

[3] S. Wang, N. Mamedova, N.A. Kotov, W. Chen, and J. Studer: Nano Letters Vol. 2 (2002), p.817.

[4] J.R. Lakowicz, I. Gryczynski, Z. Gryczynski, K. Nowaczyk, and C.J. Murphy: Anal. Biochem. Vol. 280 (2000), p.128.

[5] L.M. Lizmarzan, M. Giersig, and P. Mulvaney: Langmuir Vol. 12 (1996), p.4329.

[6] S. Yatsunenko, K. Świątek, M. Godlewski, M. Fröba, P.J. Klar, and W. Heimbrodt: Optical Materials (in press).

DOI: 10.1016/j.optmat.2007.02.028

[7] K. Karpińska, M. Godlewski, M. Leskelä, and L. Niinisto: J. Alloys Comp. Vol. 225 (1995), p.544.

[8] M. Godlewski and M. Leskelä: CRC Critical Reviews in Solid State and Materials Sciences Vol. 19 (1994), p.199.

[9] R.N. Bhargava, D. Gallagher, X. Hong, and A. Nurmikko: Phys. Rev. Lett. Vol. 72 (1994), p.416.

[10] T.A. Kennedy, E.R. Glaser, P.B. Klein, and R.N. Bhargava: Phys. Rev. B Vol. 52 (1995), p. R14356.

[11] R.N. Bhargava: J. Lumin. Vol 70 (1996), p.85.

[12] R.N. Bhargava, V. Chhabra, B. Kulkarni, and J.V. Veliadis: Phys. Stat. Solidi (b) Vol. 210 (1998), p.621.

[13] R.N. Bhargava, V. Chhabra, T. Som, A. Ekimov, and N. Taskar: Phys. Stat. Solidi (b) Vol. 229 (2002), p.897.

DOI: 10.1002/1521-3951(200201)229:2<897::aid-pssb897>3.0.co;2-c

[14] A.A. Bol and A. Meijerink: Phys. Rev. B Vol. 58 (1998), p. R15997.

[15] M. Godlewski, V. Yu. Ivanov, A. Khachapuridze, and S. Yatsunenko: Phys. Stat. Solidi (b) Vol. 229 (2002), p.533.

[16] M. Godlewski, S. Yatsunenko, A. Khachapuridze, V. Yu. Ivanov, Z. Gołacki, G. Karczewski, P.J. Bergman, P.J. Klar, W. Heimbrodt, and M.R. Phillips: J. Alloys Compd. Vol. 380 (2004), p.45.

DOI: 10.1016/j.jallcom.2004.03.020

[17] M. Godlewski, S. Yatsunenko, V. Yu. Ivanov, A. Khachapuridze, K. Świątek, E.M. Goldys, M.R. Phillips, P.J. Klar, and W. Heimbrodt: Acta Physica Polonica A Vol. 107 (2005), p.65.

DOI: 10.12693/aphyspola.107.65

[18] M. Godlewski: Optica Applicata (in press).

[19] M. Godlewski, S. Yatsunenko, and V. Yu. Ivanov: Izraeli J. Chem. (in press).

[20] M. Godlewski, S. Yatsunenko, K. Drozdowicz-Tomsia, E.M. Goldys, M.R. Phillips, P.J. Klar, and W. Heimbrodt: Acta Physica Polonica A Vol. 108 (2005), p.681.

DOI: 10.12693/aphyspola.108.681

[21] E.M. Goldys, K. Drozdowicz-Tomsia, Sun JinJun, Dosi Dosev, I.M. Kennedy, S. Yatsunneko, and M. Godlewski: unpublished results.

[22] E. Fortunato, P. Nunes, D. Costa, D. Brida, I. Ferreira, R. Martins: Vacuum Vol. 64 (2002), p.233.

[23] M. Godlewski, E. Łusakowska, R. BoŜek, E.M. Goldys, M.R. Phillips, T. Böttcher, S. Figge, and D. Hommel: Phys. Stat. solidi (a) Vol. 201 (2004), p.212.

[24] M. Godlewski, V. Yu. Ivanov, E. Łusakowska, R. BoŜek, S. Miasojedovas, S. Jurš÷nas, K. Kazlauskas, A. Žukauskas, E.M. Goldys, M.R. Phillips, T. Böttcher, S. Figge, and D. Hommel: Phys. Stat. Solidi (c) Vol. 2 (2005), p.1056.

DOI: 10.1002/pssc.200460619

[25] M. Godlewski: Proceedings of the Eleventh International Workshop on the PHYSICS OF SEMICONDUCTOR DEVICES, edited by V. Kumar and P.K. Basu, Allied Publishers Ltd., New Delhi, Vol. 1 (2001), p.123.

[26] Y. Cho, J. Song, S. Keller, M. Minsky, E. Hu, U. Mishra, and S. DenBaara: Appl. Phys. Lett. Vol. 73 (1998), p.1128.

[27] A. Munkholm, G. Stephenson, J. Eastman, O. Auciello, M. Ramana Murty, C. Thompson, P. Fini, J. Speck, and S. DenBaars: J. Cryst. Growth Vol. 221 (2000), p.98.

DOI: 10.1016/s0022-0248(00)00656-4

[28] M. Minsky, S. Chichibu, S. Fleischer, A. Abare, J. Bowers, E. Hu, S. Keller, U. Mishra, and S. DenBaars: Jpn. J. Appl. Phys. (Part 2) Vol. 37 (1998), p.1362.

DOI: 10.1143/jjap.37.l1362

[29] G. Pozina, B. Monemar, N.M. Shmidt, A.V. Lebedev, W.V. Lundin, B.V. Pushnyi, V.V. Ratnikov, T.V. Shubina, A.A. Tsatsulnikov and A.S. Usikov: Linköping University IFM, annual report.

DOI: 10.1016/s0921-5107(98)00400-0

[30] M. Godlewski and A. Kozanecki: in Handbook of Electroluminescent Materials, edited by D.R. Vij, Institute of Physics Publishing of U.K., Bristol and Philadelphia, IOP Publishing 2004, pp.348-390.

[31] Y.S. Wang, P.J. Thomas, and P. O'Brien: J. Phys. Chem. B Vol. 110 (2006), p.4099.

[32] Ü. Özgür and H. Morkoç: Optical Properties of ZnO and Related Alloys, in Zinc oxide Bulk, Thin Films and Nanostructures, Processing, Properties, and Applications edited by C. Jagadish and S. Pearton, Elesevier, (2006).

DOI: 10.1016/b978-008044722-3/50005-1

[33] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S. -J. Cho, and H. Morkoç: J. Appl. Phys. Vol. 98 (2005), p.041301.

DOI: 10.1063/1.1992666

[34] Y.H. Li, C.M. Mo, L.D. Zhang, R.C. Liu, and Y.S. Liu: Nanostructured Materials Vol. 11 (1999), p.307.

[35] A. Bouhelier, M.R. Beversluis, and L. Novotny: Appl. Phys. Lett. Vol. 83 (2003), p.5041.

[36] J.R. Lakowicz: Analytical Biochem. Vol. 337 (2005), p.171.