Interface Dynamics of Melt Instabilities on Semiconductor Surface

Abstract:

Article Preview

At uniform excitation of semiconductors by laser radiation with pre-threshold power, locally melted regions are formed on irradiated surfaces. This is induced by thermo diffusive instability of a distribution of uniformly generated electron-hole plasma. The shapes of locally melted regions give rise to a great variety of interesting surface patterns. A mathematical model of the surface dynamics, when the instability of the melt front arises along a chosen wave vector, is proposed. The results of computer simulation of interface dynamics of solitary melted region are compared with experimental data.

Info:

Periodical:

Solid State Phenomena (Volume 129)

Edited by:

R. Kozubski, G.E. Murch and P. Zięba

Pages:

137-143

DOI:

10.4028/www.scientific.net/SSP.129.137

Citation:

B. Datsko et al., "Interface Dynamics of Melt Instabilities on Semiconductor Surface ", Solid State Phenomena, Vol. 129, pp. 137-143, 2007

Online since:

November 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.