Interface Dynamics of Melt Instabilities on Semiconductor Surface

Bogdan Datsko; Vitaliy Meleshko; Zbigniew Świątek; Ivan Mohylyak; Lidia Lityńska-Dobrzyńska; Paweł Zięba

doi:10.4028/www.scientific.net/SSP.129.137

Paper Titles

Interface Shape Change and Shift Kinetics on the Nanoscale
p.105

Analysis of Oxygen Segregation at Metal-Oxide Interfaces Using a New Lattice Monte Carlo Method
p.111

Materials Hardness Estimation by Simulation of the Indentation Process
p.119

Stability of Hollow Nanospheres: A Molecular Dynamics Study
p.125

First Principles Study of Al(100) Twisted Interfaces
p.131

Interface Dynamics of Melt Instabilities on Semiconductor Surface
p.137

Grain Boundary Migration in Nanocrystalline Iron
p.145

Mutiscale Plastic Deformation near a Fatigue Crack from Diffraction
p.151

Statistical Model of Grain Growth in Polycrystalline Nanomaterials
p.157

HomeSolid State PhenomenaSolid State Phenomena Vol. 129Interface Dynamics of Melt Instabilities on...

Interface Dynamics of Melt Instabilities on Semiconductor Surface

Abstract:

At uniform excitation of semiconductors by laser radiation with pre-threshold power, locally melted regions are formed on irradiated surfaces. This is induced by thermo diffusive instability of a distribution of uniformly generated electron-hole plasma. The shapes of locally melted regions give rise to a great variety of interesting surface patterns. A mathematical model of the surface dynamics, when the instability of the melt front arises along a chosen wave vector, is proposed. The results of computer simulation of interface dynamics of solitary melted region are compared with experimental data.

You might also be interested in these eBooks

MULTISCALE KINETIC MODELLING OF MATERIALS

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 129)

Pages:

137-143

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.129.137

Citation:

Cite this paper

Online since:

November 2007

Authors:

Bogdan Datsko, Vitaliy Meleshko, Zbigniew Świątek, Ivan Mohylyak, Lidia Lityńska-Dobrzyńska, Paweł Zięba

Keywords:

Electron-Hole Plasma, Instability, Laser, Semiconductor, Temperature Field

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J.M. Poate, J.W. Mayer: Laser annealing of semiconductors (Acad. Press, NY, 1982).

Google Scholar

[2] A.M. Prokhorov, A. Yu. Bonchik, S.G. Kiyak, A.A. Manenkov, G.N. Mikhailova, A.V. Pokhmurskaja, A.S. Seferov, I. Ursu, V. Craciun, I.N. Mihailescu: Appl. Surf. Sci. Vol. 43 (1989), p.340.

DOI: 10.1016/0169-4332(89)90236-5

Google Scholar

[3] A. Pokhmurska, O. Bonchik, S. Kiyak, G. Savitski, A. Gloskovski: Appl. Surf. Sci. Vol. 712 (2000), p.154.

Google Scholar

[4] A. Yu. Bonchik, B.J. Datsko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr: Semiconductor Physics, Quantum electronics & Optoelectronics Vol. 3, N 3 (2000) p.311.

Google Scholar

[5] S. Kiyak, A. Bonchik, V. Gafijchuk, A. Yuzhanin, I. Tysliuk, A. Pokhmurskaja: Izvestia AN USSR, Vol. 52 (11) (1988) p.2276.

Google Scholar

[6] V. Gafiychuk, A. Shnyr, B. Datsko: Interface dynamics equations: their properties and computer simulation (information on http: /www. xxx. lanl. gov/nlin. AO/0011021, 2000).

Google Scholar

[7] V.V. Gafiychuk, I.A. Lubashevskii: Zh. Khim. Phys. (USSR) Vol. 7, N 9 (1988) p.852 (in Russian).

Google Scholar

[8] V.V. Gafiychuk, I.A. Lubashevskii: Math. Math. Phys. (USSR) Vol. 29, N 9 (1989) p.1331.

Google Scholar

[9] V.V. Gafiychuk, I.A. Lubashevskii, V.V. Osipov: Dynamics of surface structures in systems with a free boundary (Naukova Dumka, Kiev, 1990).

Google Scholar

[10] V.V. Gafiychuk, I.A. Lubashevskii: Nonlinear theory and modeling of free boundary problems arising in distributed media (VNTL Publishers).

Google Scholar