Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)
In recent years, spintronics whose principle is based on controlling the spin of electrons in semiconductor layers is presented as a complementary or even an alternative solution for production of logic devices in microelectronics. It relies on the fact that electric current in a magnetic layer can be spin polarized. Manufacture of such components is based on the use of materials or heterostructures whose electronic properties depend on their magnetic state. The magnetic Mn-Ge system is interesting because of its possible development at high Curie temperature and its integration on Si substrate. Among all of the Mn-Ge phase compounds of the diagram, Mn5Ge3 seems the most interesting one for spintronics applications: it is a stable and ferromagnetic phase at room temperature. In this paper, we present first results of the study, by Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), of the sequence of formation of the MnxGey phases in the case of reaction of a nanometric-thick Mn film (200nm) deposited by MBE on Ge (111).
Yves Bréchet, Emmanuel Clouet, Alexis Deschamps, Alphonse Finel and Frédéric Soisson
O. Abbes et al., "Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)", Solid State Phenomena, Vols. 172-174, pp. 579-584, 2011