Insulator-Metal Transition in Diluted Magnetic Semiconductor Pb1-x-ySnxVyTe under Pressure

E.P. Skipetrov; A.N. Golovanov; B.B. Kovalev; L.A. Skipetrova; A.M. Mousalitin; E.I. Slynko; V.E. Slynko

doi:10.4028/www.scientific.net/SSP.190.566

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HomeSolid State PhenomenaSolid State Phenomena Vol. 190Insulator-Metal Transition in Diluted Magnetic...

Insulator-Metal Transition in Diluted Magnetic Semiconductor Pb_1-x-ySn_xV_yTe under Pressure

Abstract:

The galvanomagnetic properties in weak magnetic fields (4.2T300 K, B0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B7 T) in the single crystal Pb_1-x-ySn_xV_yTe (x=0.20, y0.01) under hydrostatic compression up to 15 kbar have been investigated. It is shown that under pressure the decrease of activation energy of vanadium deep level, n-p-inversion of the conductivity type at low temperatures and insulator-metal transition take place. In the metallic phase sharp increase of the Hall mobility and appearance of Shubnikov-de Haas oscillations at helium temperature are observed. The pressure coefficient of vanadium level energy is determined and the diagram of the electronic structure rearrangement for Pb_1-x-ySn_xV_yTe under pressure is proposed.

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Periodical:

Solid State Phenomena (Volume 190)

Pages:

566-569

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.190.566

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Online since:

June 2012

Authors:

E.P. Skipetrov, A.N. Golovanov, B.B. Kovalev, L.A. Skipetrova, A.M. Mousalitin, E.I. Slynko, V.E. Slynko

Keywords:

Diluted Magnetic Semiconductor (DMS), Electronic Structure, Hydrostatic Pressure, Insulator-Metal Transition, IV-VI Semiconductor, Vanadium Impurity Level

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