The Influence of Ce on the Electrical Resistivity and Electronic Structure in the Gd1-xCexIn3 Compounds

Anna Bajorek; Grażyna Chełkowska; Artur Chrobak; Marzena Kwiecień Grudziecka

doi:10.4028/www.scientific.net/SSP.194.35

Paper Titles

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HomeSolid State PhenomenaSolid State Phenomena Vol. 194The Influence of Ce on the Electrical Resistivity...

The Influence of Ce on the Electrical Resistivity and Electronic Structure in the Gd_1-xCe_xIn₃ Compounds

Abstract:

All studied Gd_1-xCe_xIn₃ compounds crystallize in the cubic AuCu₃ - type of crystal structure. The influence of Gd/Ce substitution is reflected in the linear increase of the unit cell parameter. The temperature dependence of the electrical resistivity ρ(T) strongly depends on the Ce content. For compounds with x≤0.2 a typical metallic behavior has been observed. In contrary, for Ce-rich compounds (x≥0.5) a characteristic Kondo-type behaviour has been noticed. The analysis of cerium XPS core level lines reveals the occurrence of possible Ce intermediate valence.

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Solid State Phenomena (Volume 194)

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35-39

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https://doi.org/10.4028/www.scientific.net/SSP.194.35

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November 2012

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Anna Bajorek, Grażyna Chełkowska, Artur Chrobak, Marzena Kwiecień Grudziecka

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Electrical Resistivity, Electronic Structure, Rare Earth Alloys, Rare Earth Compounds

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