The Optical Spectra of a-Si:H and a-SiC:H Thin Films Measured by the Absolute Photothermal Deflection Spectroscopy (PDS)

Zdenek Remes; Ravi Vasudevan; Karol Jarolimek; Arno H.M. Smets; Miro Zeman

doi:10.4028/www.scientific.net/SSP.213.19

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HomeSolid State PhenomenaSolid State Phenomena Vol. 213The Optical Spectra of a-Si:H and a-SiC:H Thin...

The Optical Spectra of a-Si:H and a-SiC:H Thin Films Measured by the Absolute Photothermal Deflection Spectroscopy (PDS)

Abstract:

The new absolute PDS setup allows to measure simultaneously the absolute values of the optical transmittance T, reflectance R and absorptance A spectra in the spectral range 280 2000 nm with the typical spectral resolution 10 nm in ultraviolet and visible spectral range and 20 nm in the near infrared region. The PDS setup provides the dynamic detection range in the optical absorptance up to 4 orders of magnitude using non-toxic liquid perfluorohexane Fluorinert FC72. Here we demonstrate the usability of this setup on a series of intrinsic as well as doped a-Si:H and a-SiC:H thin films deposited on glass substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (CVD) from hydrogen, silane and methane under various conditions. The increase of the Tauc gap with increasing carbon concentration in intrinsic a-SiC:H was observed. The defect-induced localized states in the energy gap were observed in doped a-Si:H as well as undoped a-SiC:H below the Urbach absorption edge.

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Solid State Phenomena (Volume 213)

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19-28

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.213.19

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Online since:

March 2014

Authors:

Zdenek Remes*, Ravi Vasudevan, Karol Jarolimek, Arno H.M. Smets, Miro Zeman

Keywords:

Amorphous Silicon, Photothermal Deflection Spectrosocopy, Tauc Gap, Urbach Edge

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