Magnetoelectric Polarization of Paramagnetic HoAl3-XGaX(BO3)4 Single Crystals

Irina A. Gudim; Evgeny V. Eremin; Maksim S. Molokeev; Vladislav L. Temerov; Nikita V. Volkov

doi:10.4028/www.scientific.net/SSP.215.364

Paper Titles

Nanostructured Magnetoimpedance Multilayers with Different Thickness of FeNi Components
p.342

Magnetic and Electrical Properties of Co/Ge Bilayer Films
p.348

Features of Magnetic, Magnetoelectric and Magnetoelastic Properties of HoAl₃(BO₃)₄
p.352

Interface Structure and Magnetoresistance Studies of [Co/C]_nSuperlattices by Means of NMR and TEM
p.358

Magnetoelectric Polarization of Paramagnetic HoAl_3-XGa_X(BO₃)₄ Single Crystals
p.364

Magnetization Dynamics and Electron Transport in the La_0.7Sr_0.3MnO₃/Y₃Fe₅O₁₂Hybrid Structures
p.368

Magnetic and Dielectric Properties of PbFeBO₄ and PbMnBO₄ Single Crystals
p.372

Magnetoelectric Properties of Nd_xBi_1-xFeO₃ Thin Films
p.378

Spin-Wave Spectrum in the Sinusoidal Superlattice with Amplitude and Phase Inhomogeneities
p.385

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Magnetoelectric Polarization of Paramagnetic HoAl_3-XGa_X(BO₃)₄ Single Crystals

Abstract:

HoAl_3-xGa_x(BO₃)₄ (0 ≤ х ≤ 3) single crystals were grown from Bi₂Mo₃O₁₂Li₂MoO₄-based fluxes. Structural inversion twinning depending on crystal composition and heat treatment conditions is revealed. It is established that upon substitution of Ga³⁺ ions for Al³⁺ the magnetic characteristics of the crystals do not significantly change, while the magnetoelectric polarization decreases with increasing gallium content. The measured value and sign of polarization charges depend on a ratio between the left and right isomers.